500GB, Read/write speeds of up to 560/530 MB/s, Class 0 (AES 256) TCG/Opal v2.0, MS eDrive (IEEE1667), SATA 6 Gb/s Interface, compatible with SATA 3 Gb/s & SATA 1.5 Gb/s interface, Cache Memory Samsung 512 MB Low Power DDR4 SDRAM, TRIM Supported, S.M.A.R.T Supported, Max. 30 mW * Actual power

500GB, M.2 NVMe PCIe 3.0, Read 3500 MB/s, Write 2600 MB/s, Storage type V-NAND, NVMe version 1.4, Supported security algorithms 256-bit AES, PCI Express interface data lanes x4, SMART support

500GB, M.2, Read Up to 6,900 MB/s, Write Up to 5,000 MB/s, PCIe Gen 4.0 x4, NVMe 1.3c, Samsung V-NAND 3-bit MLC, Cache Memory Samsung 512MB Low Power DDR4 SDRAM, TRIM Support, S.M.A.R.T Support